Excess Electrons in Polar Cluster Anions.
نویسندگان
چکیده
منابع مشابه
Comment on "Characterization of excess electrons in water-cluster anions by quantum simulations".
The conclusion by Turi et al. (Reports, 5 August 2005, p. 914) that all experimental spectral and energetic data on water-cluster anions point toward surface-bound electrons is overstated. Comparison of experimental vertical detachment energies with their calculated values for (H2O)n- clusters with surface-bound and internalized electrons supports previous arguments that both types of clusters ...
متن کاملCharacterization of excess electrons in water-cluster anions by quantum simulations.
Water-cluster anions can serve as a bridge to understand the transition from gaseous species to the bulk hydrated electron. However, debate continues regarding how the excess electron is bound in (H2O)-n, as an interior, bulklike, or surface electronic state. To address the uncertainty, the properties of (H2O)-n clusters with 20 to 200 water molecules have been evaluated by mixed quantum-classi...
متن کاملObservation of large water-cluster anions with surface-bound excess electrons.
Anionic water clusters have long been studied to infer properties of the bulk hydrated electron. We used photoelectron imaging to characterize a class of (H2O)n- and (D2O)n- cluster anions (n </= 200 molecules) with vertical binding energies that are significantly lower than those previously recorded. The data are consistent with a structure in which the excess electron is bound to the surface ...
متن کاملInterior- and surface-bound excess electron states in large water cluster anions.
We present the results of mixed quantum/classical simulations on relaxed thermal nanoscale water cluster anions, (H(2)O)(n)(-), with n=200, 500, 1000, and 8000. By using initial equilibration with constraints, we investigate stable/metastable negatively charged water clusters with both surface-bound and interior-bound excess electron states. Characterization of these states is performed in term...
متن کاملExact Solution for Excess Electrons in Quantum
– We derive excess carrier populations in quantum wells, embedded in the intrinsic region of p-i-n solar cells. In the process of the analysis, we (a) solve for photo-generated carriers in quantum wells and (b) determine explicit dependence on incident solar wavelength. We include in the computations the existence of optical gaps near 1eV or wavelengths in the near infrared, so that our complet...
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ژورنال
عنوان ژورنال: Acta Chemica Scandinavica
سال: 1997
ISSN: 0904-213X
DOI: 10.3891/acta.chem.scand.51-0145